The characteristics of led lamp bead chip and the difference between photodiode PD and PT

1. MB chip

Definition: METAL BONDING chip; this chip is a patented product of UEC.

Features: 1. Using material with high heat dissipation coefficient---SI as the substrate, it is easy to dissipate heat.

2. The epitaxial layer and the substrate are bonded (WAFER BONDING) through the metal layer, and photons are reflected at the same time to avoid the absorption of the substrate.

3. The conductive SI substrate replaces the GAAS substrate, which has good thermal conductivity (the difference in thermal conductivity is 3-4 times), and is more suitable for the field of high driving current.

4. The bottom metal reflective layer is conducive to the improvement of luminosity and heat dissipation

5. The size can be increased, used in the field of HIGH POWER, ER: 42MIL MB

2. GB chip

Definition: GLUE BONDING chip; the chip is a patented product of UEC

Features: 1. The transparent sapphire substrate replaces the light-absorbing GAAS substrate, and its light output is the same as that of the traditional AS (ABSOR